Sep 18, 2017 - Materials Modeling Enables Semiconductor Manufacturers to Save Time and Cost for Advanced Process Node Development
Dec 5, 2016 - Model Developed Through Collaboration Between Synopsys and IIT Bombay to Simulate Negative-Bias Temperature Instability in FinFET and Nanowire FET at 7nm, 5nm and Below
Jul 11, 2016 - Synopsys' Process Explorer and Raphael accurately simulate parasitic resistance of alternative metals and liner-barrier materials at the 7nm node and beyond
May 23, 2016 - Acquisition supports the Synopsys TCAD strategy to offer a comprehensive solution to reduce development time and cost for advanced node development by enabling the evaluation and ...
May 23, 2016 - Enables Earlier Co-Optimization of Devices, Processes, Materials and Design
Dec 16, 2014 - Enables Delivery of Accurate Sentaurus TCAD Models for Nanowire, FinFET and Tunnel-FET Transistors
Jun 30, 2014 - Collaboration enables stochastic modeling of device degradation and reliability through industry leading Sentaurus Device TCAD simulator